STMicroelectronics has introduced the STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches. The new galvanically isolated gate drivers feature ST’s latest galvanic ...
Targeting mid-power products involving motor drives and energy-conversion systems, STMicro’s latest gate drivers for SiC MOSFETs and IGBT power switches offers improved isolation and protection ...
SemiQ Inc. has expanded its Gen3 SiC MOSFET family with the launch of a 1,200-V TSPAK-packaged series, targeting industrial and electric vehicle (EV) applications, such as EV charging, motor drives, ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...
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